HGT1S20N36G3VL Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs

March 2004
HGTP20N36G3VL,HGT1S20N36G3VLS,
HGT1S20N36G3VL
20A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = 175^oC
• Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device which is
intended to be used as an ignition coil driver in automotive ignition
circuits. Unique features include an active voltage clamp between
the collector and the gate which provides Self Clamped Inductive
Switching (SCIS) capability in ignition circuits. Internal diodes pro-
vide ESD protection for the logic level gate. Both a series resistor
and a shunt resistor are provided in the gate circuit.
PACKAGING
PART NUMBER
PACKAGE
BRAND
HGTP20N36G3VL
TO-220AB
20N36GVL
HGT1S20N36G3VL
TO-262AA
20N36GVL
HGT1S20N36G3VLS
TO-263AB
20N36GVL
Packages
COLLECTOR
(FLANGE)
JEDEC TO-220AB
EC
G
JEDEC TO-263AB
G
E
JEDEC TO-262AA
ECG
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Symbol
COLLECTOR
The development type number for this device is TA49296.
GATE
R₁
R₂
EMITTER
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Bkdn Voltage At 10mA, R_GE = 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BV_CER
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_ECS
Collector Current Continuous At V_GE = 5.0V, T_C = +25^oC, Figure 7 . . . . . . . . . . . . . I_C25
At V_GE = 5.0V, T_C = +100^oC . . . . . . . . . . . . . . . . . . . .I_C100
Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Inductive Switching Current At L = 2.3mH, T_C = +25^o C . . . . . . . . . . . . . . . . . . . . . . I_SCIS
At L = 2.3mH, T_C = +150^oC . . . . . . . . . . . . . . . . . . . . . . I_SCIS
Collector to Emitter Avalanche Energy At L = 2.3mH, T_C = +25^oC . . . . . . . . . . . . . . E_AS
Power Dissipation Total At T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
NOTE: May be exceeded if I_GEM is limited to 10mA.
HGTP20N36G3VL
HGT1S20N36G3VL
HGT1S20N36G3VLS
395
28
37.7
26
±10
21
16
500
150
1.0
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/^oC
o_C
o_C
KV
©2004 Fairchild Semiconductor Corporation
HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1