HGT1N40N60A4D Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Data Sheet
HGT1N40N60A4D
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25^oC and 150^oC. This
IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49349.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1N40N60A4D
SOT-227
40N60A4D
NOTE: When ordering, use the entire part number.
Features
• 100kHz Operation At 390V, 22A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 55ns at T_J = 125^oC
• Low Conduction Loss
Symbol
C
G
E
Packaging
JEDEC STYLE SOT-227B
GATE
EMITTER
TAB
(ISOLATED)
COLLECTOR EMITTER
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B