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H11G2SM Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – High Voltage Photodarlington Optocouplers
September 2009
H11G1M, H11G2M, H11G3M
High Voltage Photodarlington Optocouplers
Features
■ High BVCEO
– Minimum 100V for H11G1M
– Minimum 80V for H11G2M
– Minimum 55V for H11G3M
■ High sensitivity to low input current
(Min. 500% CTR at IF = 1mA)
■ Low leakage current at elevated temperature
(Max. 100µA at 80°C)
■ Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
■ IEC 60747-5-2 approved (ordering option V)
Applications
■ CMOS logic interface
■ Telephone ring detector
■ Low input TTL interface
■ Power supply isolation
■ Replace pulse transformer
General Description
The H11GXM series are photodarlington-type optically
coupled optocouplers. These devices have a gallium
arsenide infrared emitting diode coupled with a silicon
darlington connected phototransistor which has an inte-
gral base-emitter resistor to optimize elevated tempera-
ture characteristics.
Schematic
Package Outlines
ANODE 1
CATHODE 2
N/C 3
6 BASE
5 COLLECTOR
4 EMITTER
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
www.fairchildsemi.com