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H11F1M Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Photo FET Optocouplers | |||
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H11F1M, H11F2M, H11F3M
Photo FET Optocouplers
Features
As a remote variable resistor:
â ⤠100⦠to ⥠300Mâ¦
â ⥠99.9% linearity
â ⤠15pF shunt capacitance
â ⥠100G⦠I/O isolation resistance
As an analog switch:
â Extremely low offset voltage
â 60 Vpk-pk signal capability
â No charge injection or latch-up
â ton, toff ⤠15µS
â UL recognized (File #E90700)
Applications
As a remote variable resistor:
â Isolated variable attenuator
â Automatic gain control
â Active filter fine tuning/band switching
As an analog switch:
â Isolated sample and hold circuit
â Multiplexed, optically isolated A/D conversion
May 2007
tm
General Description
The H11FXM series consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled to a symmetrical
bilateral silicon photo-detector. The detector is electri-
cally isolated from the input and performs like an ideal
isolated FET designed for distortion-free control of low
level AC and DC analog signals. The H11FXM series
devices are mounted in dual in-line packages.
Packages
Schematic
ANODE 1
CATHODE 2
6
OUTPUT
TERM.
5
3
4
OUTPUT
TERM.
©2007 Fairchild Semiconductor Corporation
H11FXM Rev. 1.0.0
www.fairchildsemi.com
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