H11D1SR2VM Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – High Voltage Phototransistor Optocouplers

September 2009
4N38M, H11D1M, H11D2M, H11D3M, MOC8204M
High Voltage Phototransistor Optocouplers
Features
■ High voltage:
– MOC8204M, BV_CER = 400V
– H11D1M, H11D2M, BV_CER = 300V
– H11D3M, BV_CER = 200V
■ High isolation voltage:
– 7500 V_AC peak, 1 second
■ Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
■ IEC 60747-5-2 approved (ordering option V)
Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
■ Appliance sensor systems
■ Industrial controls
General Description
The 4N38M, H11DXM and MOC8204M are photo-
transistor-type optically coupled optoisolators. A gallium
arsenide infrared emitting diode is coupled with a high
voltage NPN silicon phototransistor. The device is sup-
plied in a standard plastic six-pin dual-in-line package.
Schematic
Package Outlines
ANODE 1
CATHODE 2
N/C 3
6 BASE
5 COLLECTOR
4 EMITTER
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
www.fairchildsemi.com