H11AG1SD Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
DESCRIPTION
The H11AG series consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled with a silicon
phototransistor in a dual in-line package. This device
provides the unique feature of the high current transfer
ratio at both low output voltage and low input current.
This makes it ideal for use in low power logic circuits,
telecommunications equipment and portable electronics
isolation applications.
6
6
FEATURES
1
• High efficiency low degradation liquid epitaxial IRED
• Logic level compatible, input and output currents, with
CMOS and LS/TTL
• High DC current transfer ratio at low input currents
• Underwriters Laboratory (UL) recognized File #E90700
6
APPLICATIONS
1
• CMOS driven solid state reliability
• Telephone ring detector
• Digital logic isolation
ABSOLUTE MAXIMUM RATINGS
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
DETECTOR
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
Continuous Collector Current
Symbol
T_STG
T_OPR
T_SOL
P_D
I_F
V_R
I_F(pk)
P_D
P_D
Device
All
All
All
All
All
All
All
All
All
All
H11AG3
SCHEMATIC
1
ANODE 1
6 BASE
CATHODE 2
5 COL
N/C 3
4 EMITTER
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
50
6
3.0
75
1.0
150
2.0
50
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
mW
mW/°C
mA
 2001 Fairchild Semiconductor Corporation
DS300213 1/28/02
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www.fairchildsemi.com