GF1A- Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – 1.0 Ampere Glass Passivated Rectifier

Features
• Low forward voltage drop.
• High current capability.
• Easy pick and place.
• High surge current capability.
3.93
3.73
1.67
1.47
+
GF1A - GF1M
0.062 (1.575)
0.055 (1.397)
2
0.181 (4.597)
0.157 (3.988)
0.208 (5.283)
0.188 (4.775)
SMA/DO-214AC
2.38
2.18
COLOR BAND DENOTES CATHODE
5.49
5.29
Minimum Recommended
Land Pattern
1.0 Ampere Glass Passivated Rectifier
0.060 (1.524) 0.008 (0.203)
0.030 (0.762) 0.002 (0.051)
0.114 (2.896)
1 _{0.098 (2.489)}
0.096 (2.438)
0.078 (1.981)
0.012 (0.305)
0.006 (0.152)
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
IO
if(surge)
PD
RθJA
RθJC
Tstg
TJ
Parameter
Average Rectified Current
@ TL = 125°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient **
Thermal Resistance, Junction to Case **
Storage Temperature Range
Operating Junction Temperature
Value
1.0
30
2.0
13
80
26
-65 to +175
-65 to +175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas.
Units
A
A
W
mW/°C
°C/W
°C/W
°C
°C
Electrical Characteristics T_A = 25°C unless otherwise noted
Parameter
Device
1A
1B
1D
1G
1J
Peak Repetitive Reverse Voltage
50
100
200
400
600
Maximum RMS Voltage
35
70
140
280
420
DC Reverse Voltage (Rated V_R)
Maximum Reverse Current
@ rated V_R
T_A = 25°C
T_A = 125°C
Maximum Forward Voltage @ 1.0 A
50
100
200
400
600
5.0
50
1.0
Maximum Reverse Recovery Time
2.0
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
Typical Junction Capacitance
15
V_R = 4.0 V, f = 1.0 MHz
Units
1K
1M
800
1000
V
560
800
V
800
1000
V
µA
µA
1.2
V
µS
pF
1998 Fairchild Semiconductor International
GF1A-GF1M, Rev. E