GBU8A_10 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Bridge Rectifiers

GBU8A - GBU8M
Bridge Rectifiers
Features
• Glass passivated junction
• Surge overload rating: 200 amperes peak
• Reliable low cost construction utilizing molded plastic technique.
• Ideal for printed circuit board.
• UL certified with UL certificate #s E111753 and E326243.
February 2010
+~~ _-
GBU
Absolute Maximum Ratings * T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
8A 8B 8D 8G 8J 8K 8M
V_RRM Maximum Repetitive Reverse Voltage
50 100 200 400 600 800 1000 V
V_RMS Maximum RMS Bridge Input Voltage
35 70 140 280 420 560 700 V
V_R DC Reverse Voltage (Rated V_R)
50 100 200 400 600 800 1000 V
Average Recitified Forward Current,
I_F(AV)
@ T_A = 100°C
8.0
A
@ T_A = 45°C
6.0
A
I_FSM
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half-Sine-Wave
200
A
T_STG Storage Temperature Range
-55 to +150
°C
T_J Operating Junction Temperature
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
Parameter
P_D Power Dissipation
R_θJA Thermal Resistance, Junction to Ambient, * per leg
R_θJC Thermal Resistance, Junction to Case, * per leg
* Device mounted on PCB with 0.5 × 0.5” (12 × 12mm).
Value
16
18
3
Units
W
°C/W
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
V_F Forward Voltage, per element @ 8.0A
Reverse Current, per element @ Rated V_R
I_R
T_A = 25°C
T_A = 100°C
I²t Rating for Fusing t < 8.35ms
Value
1.0
50
500
166
Units
V
μA
μA
A²s
© 2010 Fairchild Semiconductor Corporation
GBU8A - GBU8M Rev. A5
1
www.fairchildsemi.com