GBU8A_04 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Bridge Rectifiers

GBU8A - GBU8M
Bridge Rectifiers
Features
• Glass passivated junction
• Surge overload rating: 200 amperes peak
• Reliable low cost construction utilizing molded plastic technique.
• Ideal for printed circuit board.
+~~ _-
GBU
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
8A 8B 8D 8G 8J
V_RRM
V_RMS
V_R
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
50
Maximum RMS Bridge Input Voltage
35
DC Reverse Voltage (Rated V_R)
50
Average Recitified Forward Current, @ T_A = 100°C
@ T_A = 45°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half-Sine-Wave
100 200 400 600
70 140 280 420
100 200 400 600
8.0
6.0
200
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature
-55 to +150
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
Parameter
P_D
R_θJA
R_θJC
Power Dissipation
Thermal Resistance, Junction to Ambient, * per leg
Thermal Resistance, Junction to Case, * per leg
* Device mounted on PCB with 0.5 × 0.5” (12 × 12mm).
Value
16
18
3
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
V_F
Forward Voltage, per element @ 8.0A
I_R
Reverse Current, per element @ Rated V_R
T_A = 25°C
T_A = 100°C
I²t Rating for Fusing t < 8.35ms
Value
1.0
50
500
166
Units
8K 8M
800 1000
V
560 700
V
800 1000
V
A
A
A
°C
°C
Units
W
°C/W
°C/W
Units
V
µA
µA
A²s
©2004 Fairchild Semiconductor Corporation
1
GBU8A - GBU8M Rev. 1.4.0
www.fairchildsemi.com