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| FZT689BTA Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT689B
ISSUE 3 - OCTOBER 1995
FEATURES
* Gain of 400 at IC=2 Amps and low saturation voltage
* Extremely low equivalent on-resistance; RCE(sat) 92m⦠at 3A
APPLICATIONS
* Darlington replacement
* Flash gun convertors and Battery powered circuits
PARTMARKING DETAIL - FZT689B
COMPLEMENTARY TYPE - FZT789B
ABSOLUTE MAXIMUM RATINGS.
C
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
8
A
Continuous Collector Current
IC
3
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V(BR)CBO 20
V(BR)CEO 20
V
IC=100µA
V
IC=10mA*
Emitter-Base
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
V(BR)EBO 5
ICBO
IEBO
VCE(sat)
Base-EmitterSaturationVoltage VBE(sat)
Base-Emitter
Turn-On Voltage
VBE(on)
V
0.1 µA
0.1 µA
0.10 V
0.50 V
0.45 V
0.9 V
0.9 V
IE=100µA
VCB=16V
VEB=4V
IC=0.1A, IB=0.5mA*
IC=2A, IB=10mA*
IC=3A, IB=20mA*
IC=1A, IB=10mA*
IC=1A, VCE=2V*
Static Forward
Current Transfer
Ratio
Transition Frequency
hFE
500
400
150
fT
150
MHz
IC=0.1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
Cobo
ton
toff
200
pF VEB=0.5V, f=1MHz
16
pF VCB=10V, f=1MHz
30
ns IC=500mA,IB1=50mA
800
ns
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 219
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