FZT3019_06 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

FZT3019
NPN General Purpose Amplifier
April 2006
tm
Features
• This device is designed for general purpose medium power amplifiers and
switches requiring collector currents to 500 mA and collector voltages up to 80 V.
• Sourced from process 12.
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CEO
V_CBO
V_EBO
I_C
T_J, T_stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current - Continuous
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
4
3
2
1 _SOT-223
1. Base 2. Collector 3. Emitter
Value
80
140
7.0
1.0
-55 ~ +150
Units
V
V
V
A
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I_EBO
Emitter-Cutoff Current
On Characteristics
I_C = 30 mA, I_B = 0
I_C = 100 µA, I_E = 0
I_E = 100 µA, I_C = 0
V_CB = 90 V, I_E = 0
V_CB = 90 V, I_E = 0, T_a = 150°C
V_EB = 5 V,
h_FE
DC Current Gain
V_CE(sat)
Collector-Emitter Saturation Voltage
V_BE(sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics
I_C = 0.1 mA, V_CE = 10 V
I_C = 10 mA, V_CE = 10 V
I_C = 150 mA, V_CE = 10 V
I_C = 500 mA, V_CE = 10 V
I_C = 1.0 A, V_CE = 10 V
I_C = 150 mA, I_B = 15 mA
I_C = 500 mA, I_B = 50 mA
I_C = 150 mA, I_B = 15 mA
f_T
C_cob
C_ibo
h_fe
Current Gain - Bandwidth Product
Collector-Base Capacitance
Input Capacitance
Small Signal current Gain
I_C = 50 mA, V_CE = 10 V, f = 20 MHz
V_CB = 10 V, I_E = 0, f = 1.0 MHz
V_BE = 0.5 V, I_E = 0, f = 1.0 MHz
I_C = 50 mA, V_CE = 10 V,
f = 20 MHz
rb’Cc
NF
Collector Base Time Constant
Noise Figure
* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
I_C = 10 mA, V_CB = 10 V, f = 4.0 MHz
I_C = 100 mA, V_CE = 10 V,
R_S = 1.0kΩ, f = 1.0KHz
Min.
80
140
7.0
50
90
100
50
15
100
80
Max.
10
10
10
Units
V
V
Vn
nA
µA
nA
300
0.2
V
0.5
V
1.1
V
MHz
12
pF
60
pF
400
400
pS
4.0
dB
©2006 Fairchild Semiconductor Corporation
1
FZT3019 Rev. B
www.fairchildsemi.com