FYV0203S Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Schottky Diode

FYV0203S/DN/DP/DS
3
Connection Diagram
3
3
3
YB1
2
1
SOT-23
1
2
Marking
FYV0203S = YB1 FYV0203DP = YB3
FYV0203DN = YB2 FYV0203DS = YB4
Schottky Diode
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
V_RRM
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
Pulse Width = 1.0s
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature
1 FYV0203S
3
1 FYV0203DP 2
3
1 FYV0203DN 2
1 FYV0203DS 2
Value
30
0.2
0.6
-65 to +150
150
Units
V
A
A
°C
°C
Thermal Characteristics
Symbol
R_θJA
Parameter
Thermal Resistance, Junction to Ambient
Value
430
Units
°C/W
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Min.
V_{F *}
Forward Voltage Drop
I_F = 0.1mA
-
I_F = 1mA
-
I_F = 10mA
-
I_F = 30mA
-
I_F = 100mA
-
I_F = 200mA
-
I_{R *}
Reverse Current
@ Rated V_R
T_A = 25 °C
-
T_A= 125 °C
-
C_T
Total Capacitance
V_R = 1V , f = 1.0 MHz
-
t_rr
Reverse Recovery Time
I_F = I_R = 10mA, I_RR = 1mA, R_L = 100Ω
-
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Typ.
210
270
340
390
485
600
0.2
130
-
-
Max.
240
320
400
500
800
1000
2
-
10
5
Units
mV
uA
pF
ns
©2001 Fairchild Semiconductor Corporation
Rev. A, September 2001