FYPF2010DNTU Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – High frequency properties and switching speed

FYPF2010DN
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
• Polarity protection
12 3
TO-220F
1. Anode 2.Cathode 3. Anode
20A SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings (per diode) T_C=25°C unless otherwise noted
Symbol
Parameter
Value
V_RRM
Maximum Repetitive Reverse Voltage
100
V_R
Maximum DC Reverse Voltage
100
I_F(AV)
Maximum Average Rectified Current
@ T_C = 105°C
20
I_FSM
Maximum Forward Surge Current (per diode)
150
60Hz Single Half-Sine Wave
T_J, T_STG
Operating Junction and Storage Temperature
-65 to +150
Thermal Characteristics
Symbol
R_θJC
Parameter
Maximum Thermal Resistance, Junction to Case (per diode)
Value
2.8
Electrical Characteristics (per diode) T_C=25 °C unless otherwise noted
Symbol
Parameter
Min. Typ.
V_{FM *}
Maximum Instantaneous Forward Voltage
I_F = 10A
I_F = 10A
I_F = 20A
I_F = 20A
T_C = 25 °C
-
-
T_C = 125 °C
-
-
T_C = 25 °C
-
-
T_C = 125 °C
-
-
I_{RM *}
Maximum Instantaneous Reverse Current
(per diode)
@ rated V_R
T_C = 25 °C
-
-
T_C = 125 °C
-
-
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Max.
0.77
0.65
-
0.75
0.1
20
Units
V
V
A
A
°C
Units
°C/W
Units
V
mA
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002