FYP1010DN_07 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Schottky Barrier Rectifier

FYP1010DN
Schottky Barrier Rectifier
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
June 2007
1
TO220 (None Jedec type)
1.Anode
3.Anode
2. Cathode
Absolute Maximum Ratings *T_C=25°C unless otherwise noted
Symbol
Parameter
V_RRM
V_R
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
@ T_C = 135°C
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
T_J, T_STG
Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
Parameter
R_θJC
Maximum Thermal Resistance, Junction to Case (per diode)
Electrical Characteristics (per diode)
Symbol
Parameter
V_{FM *}
Maximum Instantaneous Forward Voltage
I_F = 5A
I_F = 5A
I_F = 10A
I_F = 10A
I_{RM *}
Maximum Instantaneous Reverse Current
@ rated V_R
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
T_C = 25 °C
T_C = 125 °C
T_C = 25 °C
T_C = 125 °C
T_C = 25 °C
T_C = 125 °C
Value
100
100
10
100
-65 to +150
Value
2.5
Value
0.75
0.65
0.95
0.73
1
30
Units
V
V
A
A
°C
Units
°C/W
Units
V
mA
©2007 Fairchild Semiconductor Corporation
1
FYP1010DN Rev. C
www.fairchildsemi.com