FYP1004DNTU Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Low forward voltage drop

FYP1004DN
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
123
TO-220
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_RRM
V_R
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
@ T_C = 137°C
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
T_J, T_STG
Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
R_θJC
Parameter
Maximum Thermal Resistance, Junction to Case (per diode)
Electrical Characteristics (per diode)
Symbol
V_{FM *}
I_{RM *}
Parameter
Maximum Instantaneous Forward Voltage
I_F = 5A
I_F = 5A
I_F = 10A
I_F = 10A
Maximum Instantaneous Reverse Current
@ rated V_R
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
T_C = 25 °C
T_C = 125 °C
T_C = 25 °C
T_C = 125 °C
T_C = 25 °C
T_C = 125 °C
Value
40
40
10
80
-65 to +150
Value
3.0
Value
0.55
0.49
0.67
0.65
1
40
Units
V
V
A
A
°C
Units
°C/W
Units
V
mA
©2001 Fairchild Semiconductor Corporation
Rev. A, March 2001