FYD0504SATM Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Schottky Barrier Rectifier

FYD0504SA/FYD0504SATM
Schottky Barrier Rectifier
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
• “TM” is a packing option
Applications
• Switched mode power supply
• Freewheeling diodes
4
2. 4. Cathode
October 2008
123
D-PAK
1. Anode 3. Anode
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
V_RRM
V_R
I_F(AV)
I_FSM
T_J, T_STG
Parameter
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
@ T_C = 135°C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
R_qJC
Maximum Thermal Resistance, Junction to Case
Electrical Characteristics T_C=25 °C unless otherwise noted
Symbol
Parameter
V_{FM *}
I_{RM *}
Maximum Instantaneous Forward Voltage
I_F = 5A
I_F = 5A
I_F = 10A
I_F = 10A
Maximum Instantaneous Reverse Current
@ rated V_R
* Pulse Test: Pulse Width=300ms, Duty Cycle=2%
T_C = 25 °C
T_C = 125 °C
T_C = 25 °C
T_C = 125 °C
T_C = 25 °C
T_C = 125 °C
© 2007 Fairchild Semiconductor Corporation
FYD0504SA/FYD0504SATM Rev. 1.0.0
1
Ratings
40
40
5
80
-65 to +150
Units
V
V
A
A
°C
Value
3.5
Value
0.55
0.49
0.67
0.65
1
40
Units
°C/W
Units
V
mA
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