FYA3010DN Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Schottky Barrier Rectifier

FYA3010DN
Schottky Barrier Rectifier
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
July 2005
123
TO-3P
Marking: Y3010DN
1. Anode 2.Cathode 3. Anode
Absolute Maximum Ratings (per diode) T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_RRM
Maximum Repetitive Reverse Voltage
100
V_R
Maximum DC Reverse Voltage
100
I_F(AV)
Average Rectified Forward Current
@ T_C = 135°C
30
I_FSM
Non-repetitive Peak Surge Current (per diode)
250
60Hz Single Half-Sine Wave
T_J, T_STG
Operating Junction and Storage Temperature
- 65 to +150
Thermal Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
R_θJC
R_θJC
R_θJC
Maximum Thermal Resistance, Junction to Case (per diode)
Maximum Thermal Resistance, Junction to Case (per PKG)
Maximum Thermal Resistance, Case to Heatsink
Value
0.78
0.48
0.2
Electrical Characteristics (per diode) T_a = 25°C unless otherwise noted
Symbol
Parameter
V_{FM *}
I_{RM *}
Maximum Instantaneous Forward Voltage
I_F = 15A
I_F = 15A
I_F = 30A
I_F = 30A
Maximum Instantaneous Reverse Current
@ rated V_R
T_C = 25 °C
T_C = 125 °C
T_C = 25 °C
T_C = 125 °C
T_C = 25 °C
T_C = 125 °C
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Value
0.85
0.67
1.05(Typ.)
0.80
1
20
Units
V
V
A
A
°C
Units
°C/W
°C/W
°C/W
Units
V
mA
©2005 Fairchild Semiconductor Corporation
1
FYA3010DN Rev. A
www.fairchildsemi.com