FVP12030IM3LEG1 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Energy Recovery

FVP12030IM3LEG1
Energy Recovery
March 2007
PDP SPM^TM
Feature
• Use of high speed 300V IGBTs with parallel FRDs
• Single-grounded power supply by means of built-in HVIC
• Sufficient current driving capability for IGBTs due to adding a
buffer
• Isolation rating of 1500Vrms/min.
• Low leakge current due to using an insulated metal sub-
strates
Applications
• Energy Recovery Part of a PDP (Plasma Display Panel)
General Description
It is an advanced smart power module(SPM^TM) that Fairchild
has newly developed and designed to provide very compact
and optimized performance for the energy recovery circuit of
PDP driving system. It combines optimized circuit protection
and drive matched to low-loss and high speed IGBTs. Under
voltage lock-out protection function enhances the system reli-
ability . The high speed built-in HVIC provides opto-couplerless
single power supply IGBT gate driving capability that futher
reduce the overall system size of PDP sustaining boards.
Package Outlines
Figure 1.
©2006 Fairchild Semiconductor Corporation
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FVP12030IM3LEG1 Rev. A
www.fairchildsemi.com