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FTM3725 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN Transistor
FTM3725
NPN Transistor
• This device is designed for high current, low impedance line driver
applications.
• Sourced from process 26.
B4
B4E4
B2 E3
E2
B1
E1
C4
C4C4
C2 C3
C2
C1
C1
SOIC-16
Mark: FTM3725
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
Value
40
60
6.0
1.2
- 55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics *
IC = 10mA, IB = 0
IC = 10µA, VBE = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 50V, IE = 0
VCB = 50V, IE = 0, Ta = 100°C
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V, Ta = 55°C
IC = 300mA, VCE = 1.0V
IC = 500mA, VCE = 1.0V
IC = 500mA, VCE = 1.0V, Ta = 55°C
IC = 800mA, VCE = 2.0V
IC = 1.0mA, VCE = 5.0V
IC = 10mA, IB = 1.0mA
IC = 100mA, IB = 10mA
IC = 300mA, IB = 30mA
IC = 500mA, IB = 50mA
IC = 800mA, IB = 80mA
IC = 1.0mA, IB = 100mA
IC = 10mA, IB = 1.0mA
IC = 100mA, IB = 10mA
IC = 300mA, IB = 30mA
IC = 500mA, IB = 50mA
IC = 800mA, IB = 80mA
IC = 1.0mA, IB = 100mA
Min. Typ. Max. Units
40
V
60
V
60
V
6.0
V
100 nA
10
µA
30
60
180
30
40
35
20
20
25
0.25 V
0.26 V
0.4
V
0.52 V
0.8
V
0.95 V
0.76 V
0.86 V
1.1
V
1.2
V
1.5
V
1.7
V
©2004 Fairchild Semiconductor Corporation
Rev. B, June 2004
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