FSB67508 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Smart Power Module (SPM)

FSB67508
Smart Power Module (SPM^®)
October 2009
SPM ^TM
Features
• R_DS(ON).MAX=11mΩ @ I_D=38A,T_J=25°C a half-bridge FRFET
inverter including high voltage integrated circuit (HVIC)
• Negative dc-link terminals for inverter current sensing appli-
cations
• HVIC for gate driving and protection functions
• 3/5V CMOS/TTL compatible, active-high interface
• Isolation voltage rating of 1500Vrms for 1min.
• Embedded bootstrap diode in the package
General Description
FSB67508 is a smart power module (SPM^®) as a compact
solution for small power motor drive applications such as E-
bike. It is composed of 2 MOSFET, and 1 half-bridge HVIC for
gate driving. This offers an extremely compact, high
performance half-bridge inverter in a single isolated package .
The package is optimized for the thermal performance and
compactness for the use in the built-in motor application and
any other application where the assembly space is concerned.
Absolute Maximum Ratings
Symbol
Parameter
V_PN
DC Link Input Voltage,
Drain-source Voltage of each FET
I_D25 Each FET Drain Current, Continuous
I_D80 Each FET Drain Current, Continuous
I_DP
Each FET Drain Current, Peak
P_D
Maximum Power Dissipation
V_CC Control Supply Voltage
V_BS High-side Bias Voltage
V_IN
Input Signal Voltage
T_J
Operating Junction Temperature
T_STG Storage Temperature
R_θJC ^{Junction to Case Thermal Resistance}
Conditions
T_C = 25°C
T_C = 80°C
T_C = 25°C, Pulsed*
T_C = 25°C, Each
Applied between V_CC and COM
Applied between V_B and U
Applied between IN and COM
Each under inverter operating condition
(Note 1)
Rating
75
38
28
95
32
20
20
-0.3 ~ VCC
-40 ~ 150
-50 ~ 150
3.9
*Repetitive rating : Pulse width limited by maximum junction temperature
Units
V
A
A
A
W
V
V
V
°C
°C
°C/W
©2009 Fairchild Semiconductor Corporation
1
FSB67508 Rev. A
www.fairchildsemi.com