FSB6726 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

FSB6726
C
E
B
SuperSOT^TM-3
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents
to 1.0 A. Sourced from Process 77.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
FSB660/FSB660A
V_CEO
Collector-Emitter Voltage
30
V_CBO
Collector-Base Voltage
40
V_EBO
Emitter-Base Voltage
5
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.5
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
R_θJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Max
FSB6726
500
250
Units
mW
°C/W
© 1999 Fairchild Semiconductor Corporation
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fsb6726lwp Pr77 RevA