FSB649 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN Low Saturation Transistor

FSB649
C
E
B
SuperSOT^TM-3
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous. Sourced from Process NC.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
FSB649
V_CEO
Collector-Emitter Voltage
25
V_CBO
Collector-Base Voltage
35
V_EBO
Emitter-Base Voltage
5
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
3
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
R_θJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Max
FSB649
500
250
Units
mW
°C/W
© 1999 Fairchild Semiconductor Corporation
fsb649.lwpPrNC revA