FSB619 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN Low Saturation Transistor

Discrete Power & Signal
Technologies
July 1998
FSB619
C
E
B
SuperSOT^TM-3 (SOT-23)
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
FSB619
V_CEO
Collector-Emitter Voltage
50
V_CBO
Collector-Base Voltage
50
V_EBO
Emitter-Base Voltage
5
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
2
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
R_θJA
Total Device Dissipation*
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
FSB619
500
4
250
Units
mW
mW/°C
°C/W
© 1998 Fairchild Semiconductor Corporation
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