FSB52006S Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Smart Power Module (SPM)

February 2008
FSB52006S
Smart Power Module (SPM)
Features
• 60V, R_DS(ON).MAX=80mΩ @ 25°C 3-phase FRFET inverter
including high voltage integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Surface mounted device package
• Moisture Sensitive Level 3
General Description
FSB52006S is a tiny smart power module (SPM) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB52006S
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB52006S is the most solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol
Parameter
V_PN
DC Link Input Voltage,
Drain-source Voltage of each FRFET
I_D25
I_D100
I_DP
P_D
V_CC
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Peak
Maximum Power Dissipation
Control Supply Voltage
V_BS High-side Bias Voltage
V_IN
T_J
T_STG
Input Signal Voltage
Operating Junction Temperature
Storage Temperature
R_θJC Junction to Case Thermal Resistance
V_ISO Isolation Voltage
Conditions
Rating
60
T_C = 25°C
T_C = 100°C
T_C = 25°C, PW < 100μs
T_C = 25°C, Each FRFET
Applied between V_CC and COM
Applied between V_B(U)-V_S(U), V_B(V)-V_S(V),
V_B(W)-V_S(W)
Applied between IN and COM
2.6
1.3
5
11
20
20
-0.3 ~ VCC+0.3
-20 ~ 125
Each FRFET under inverter operating con-
dition (Note 1)
-50 ~ 150
9.2
60Hz, Sinusoidal, 1 minute, Connection
pins to heatsink
1500
Units
V
A
A
A
W
V
V
V
°C
°C
°C/W
V_rms
©2008 Fairchild Semiconductor Corporation
1
FSB52006S Rev. A
www.fairchildsemi.com