FSB50325TD Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Smart Power Module (SPM®)

FSB50325TD
Smart Power Module (SPM^®)
April 2010
Motion-SPM ^TM
Features
• 250V R_DS(on)=1.8W(max) 3-phase FRFET inverter including
high voltage integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Extended VB pin for PCB isolation
• Embedded bootstrap diode in the package
General Description
FSB50325TD is a tiny smart power module (SPM^®) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50325TD
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50325TD is the most
solution for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol
Parameter
DC Link Input Voltage,
V_{PN Drain-source Voltage of each FRFET}
I_D25 Each FRFET Drain Current, Continuous
I_D80 Each FRFET Drain Current, Continuous
I_DP Each FRFET Drain Current, Peak
P_D
Maximum Power Dissipation
V_CC Control Supply Voltage
V_BS High-side Bias Voltage
V_IN Input Signal Voltage
T_J
Operating Junction Temperature
T_STG Storage Temperature
R_qJC ^{Junction to Case Thermal Resistance}
Conditions
Rating
250
T_C = 25°C
T_C = 80°C
T_C = 25°C, PW < 100ms
T_C = 25°C, Each FRFET
Applied between V_CC and COM
Applied between V_B(U)-U, V_B(V)-V, V_B(W)-W
Applied between IN and COM
1.5
1.0
3.0
10
20
20
-0.3 ~ VCC+0.3
-40 ~ 150
Each FRFET under inverter operating con-
dition (Note 1)
-40 ~ 125
10.2
V_ISO Isolation Voltage
60Hz, Sinusoidal, 1 minute, Connection pins
to heatsink
1500
Units
V
A
A
A
W
V
V
V
°C
°C
°C/W
V_rms
©2010 Fairchild Semiconductor Corporation
1
FSB50325TD Rev. A
www.fairchildsemi.com