FSB50325S_07 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Smart Power Module (SPM®)

May 2007
FSB50325S
Smart Power Module (SPM^®)
Features
• 250V 1.5A 3-phase FRFET inverter including high voltage
integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Surface mounted device package
• Moisture Sensitive Level (MSL) 3
General Description
FSB50325S is a tiny smart power module (SPM^®) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50325S
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50325S is the most solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol
Parameter
Conditions
Rating
V_PN
I_D25
I_D80
I_DP
P_D
V_CC
V_BS
V_IN
T_J
T_STG
R_θJC
DC Link Input Voltage,
Drain-source Voltage of each FRFET
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Peak
Maximum Power Dissipation
Control Supply Voltage
High-side Bias Voltage
Input Signal Voltage
Operating Junction Temperature
T_C = 25°C
T_C = 80°C
T_C = 25°C, PW < 100μs
T_C = 25°C, Each FRFET
Applied between V_CC and COM
Applied between V_B(U)-U, V_B(V)-V, V_B(W)-W
Applied between IN and COM
250
1.5
1.0
3.0
10
20
20
-0.3 ~ VCC+0.3
-20 ~ 150
Storage Temperature
Junction to Case Thermal Resistance
Each FRFET under inverter operating con-
dition (Note 1)
-50 ~ 150
10.2
V_ISO Isolation Voltage
60Hz, Sinusoidal, 1 minute, Connection pins
to heatsink
1500
Units
V
A
A
A
W
V
V
V
°C
°C
°C/W
V_rms
©2007 Fairchild Semiconductor Corporation
1
FSB50325S Rev. B
www.fairchildsemi.com