FSB50250UD Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Smart Power Module (SPM®)

FSB50250UD
Smart Power Module (SPM^®)
April 2010
Motion-SPM ^TM
Features
• 500V R_DS(on)=4.2W(max) 3-phase FRFET inverter including
high voltage integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Embedded bootstrap diode in the package
General Description
FSB50250UD is a tiny smart power module (SPM^®) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving.
FSB50250UTD provides low electromagnetic interference (EMI)
characteristics with optimized switching speed. Moreover, since
it employs FRFET as a power switch, it has much better
ruggedness and larger safe operation area (SOA) than that of
an IGBT-based power module or one-chip solution. The
package is optimized for the thermal performance and
compactness for the use in the built-in motor application and
any other application where the assembly space is concerned.
FSB50250UD is the most solution for the compact inverter
providing the energy efficiency, compactness, and low
electromagnetic interference.
Absolute Maximum Ratings
Symbol
Parameter
DC Link Input Voltage,
V_{PN Drain-source Voltage of each FRFET}
I_D25 Each FRFET Drain Current, Continuous
I_D80 Each FRFET Drain Current, Continuous
I_DP Each FRFET Drain Current, Peak
P_D
Maximum Power Dissipation
V_CC Control Supply Voltage
V_BS High-side Bias Voltage
V_IN Input Signal Voltage
T_J
Operating Junction Temperature
T_STG Storage Temperature
R_qJC Junction to Case Thermal Resistance
V_ISO Isolation Voltage
Conditions
Rating
500
T_C = 25°C
T_C = 80°C
T_C = 25°C, PW < 100ms
T_C = 25°C, Each FRFET
Applied between V_CC and COM
Applied between V_B(U)-U, V_B(V)-V, V_B(W)-W
Applied between IN and COM
1.1
0.8
2.8
13
20
20
-0.3 ~ VCC+0.3
-40 ~ 150
Each FRFET under inverter operating con-
dition (Note 1)
-40 ~ 125
9.3
60Hz, Sinusoidal, 1 minute, Connection
pins to heatsink
1500
Units
V
A
A
A
W
V
V
V
°C
°C
°C/W
V_rms
©2010 Fairchild Semiconductor Corporation
1
FSB50250UD Rev. A
www.fairchildsemi.com