FQU9N25TU Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 250 V, 7.4A, 420Ω

FQD9N25 / FQU9N25
N-Channel QFET^® MOSFET
250 V, .4 A, PΩ
October 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 7.4 A, 250 V, R_DS(on) = 420 mΩ (Max.) @V_GS = 10 V,
I_D = 3.7 A
• Low Gate Charge (Typ. 15.5 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
D
D
G
S
D-PAK
GDS
I-PAK
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
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Parameter
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Unit
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Thermal Characteristics
Symbol
Parameter
R_JC
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (*1 in² pad of 2 oz copper), Max.
FQD9N25TM
FQD9N25TM_F080
FQU9N25TU
2.27
110
50
Unit
o_C/W
©2000 Fairchild Semiconductor Corporation
1
FQD9N25 / FQU9N25 Rev. C1
www.fairchildsemi.com