FQT1N60CTF-WS Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm

FQT1N60C
N-Channel QFET^® MOSFET
600V, 0.2 A, 11.5 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
March 2013
Features
• 0.2 A, 600 V, R_DS(on)=9.3 Ω(7\S.)@V_GS=10 V, I_D=0.1 A
• Low Gate Charge (Typ.  nC)
• Low C_rss (Typ.  pF)
• 100% Avalanche Tested
• ^{RoHS Compliant}
D
D
S
G _SOT-223
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
R_θJA
Thermal Resistance, Junction to Ambient*
* When mounted on the minimum pad size recommended (PCB Mount)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQT1N60C
600
±30
0.2
0.12
0.8
33
0.2
0.2
4.5
2.1
0.02
-55 to +150
300
Min.
-
Max.
60
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2007 Fairchild Semiconductor Corporation
1
FQT1N60C Rev. C0
www.fairchildsemi.com