FQS4901TF Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET

FQS4901
N-Channel QFET^® MOSFET
400 V, 0.45 A, 4.2 Ω
March 2013
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
• 0.45 A, 400 V, R_DS(on)=4.2 Ω(Max.)@V_GS=10 V, I_D=0.225 A
• Low Gate Charge (Typ. 5.8 nC)
• Low C_rss (Typ. 5 pF)
• 100% Avalanche Tested
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©2000 Fairchild Semiconductor Corporation
FQS4901 Rev. C0

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