FQPF13N50T Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET

FQP13N50 / FQPF13N50
N-Channel QFET MOSFET
500 V, 12.5 A, 430 mΩ
March 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
• 12.5 A, 500 V, R_DS(on) = 430 mΩ (Max) @V_GS = 10 V,
I_D = 6.25 A
• Low Gate Charge (Typ. 45 nC)
• Low Crss (Typ. 25 pF)
• 100% Avalanche Tested
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
Drain-Source Voltage
I_D
Drain Current - Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
I_DM
Drain Current - Pulsed
(Note 1)
V_GSS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy
(Note 2)
I_AR
Avalanche Current
(Note 1)
E_AR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP13N50 FQPF13N50
500
12.5
12.5 *
7.9
7.9 *
50
50 *
± 30
810
12.5
17
4.5
170
56
1.35
0.45
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R_θJC
R_θCS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
FQP13N50
0.74
0.5
FQPF13N50
2.23
--
Unit
°C/W
°C/W
©2000 Fairchild Semiconductor Corporation
FQP13N50 / FQPF13N50 Rev. C0
www.fairchildsemi.com