FQD8P10TF Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – P-Channel QFET MOSFET - 100 V, - 6.6 A, 530 m

April 2013
FQD8P10 / FQU8P10
P-Channel QFET^® MOSFET
- 100 V, - 6.6 A, 530 m
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
D
Features
• - 6.6 A, - 100 V, R_DS(on) = 530 m (Max.) @V_GS = -10 V,
ID = - 3.3 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
D
G
S
D-PAK
G
D
S
I-PAK
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G
S
FQD8P10 / FQU8P10
-100
-6.6
-4.2
-26.4
 30
150
-6.6
4.4
-6.0
2.5
44
0.35
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R_JC
R_JA
R_JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient, Max.
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
1
FQD8P10 / FQU8P10 Rev. C0
FQD8P10 / FQU8P10
2.84
50
110
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com