FQD7N10LTF Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 100 V, 5.8 A, 350 m

FQD7N10L
N-Channel QFET^® MOSFET
100 V, 5.8 A, 350 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
• 5.8 A, 100 V, R_DS(on) = 350 m (Max.) @ V_GS = 10 V,
ID = 2.9 A
• Low Gate Charge (Typ. 4.6 nC)
• Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
D
D
G
S
D-PAK
G
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
Parameter
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P_D
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
S
FQD7N10LTM
100
5.8
3.67
23.2
 20
50
5.8
2.5
6.0
2.5
25
0.2
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_JC
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in² Pad of 2-oz Copper), Max.
FQD7N10LTM
5.0
110
50
Unit
o_C/W
©2000 Fairchild Semiconductor Corporation
1
FQD7N10L Rev. C1
www.fairchildsemi.com