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FQD6P25TM Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 250V P-Channel MOSFET | |||
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FQD6P25 / FQU6P25
250V P-Channel MOSFET
October 2008
QFET®
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchildâs proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Features
⢠-4.7A, -250V, RDS(on) = 1.1⦠@VGS = -10 V
⢠Low gate charge ( typical 21 nC)
⢠Low Crss ( typical 20 pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
⢠RoHS Compliant
D
S
!
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
G!
!
D
FQD6P25 / FQU6P25
-250
-4.7
-3.0
-18.8
±30
540
-4.7
5.5
-5.5
2.5
55
0.44
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2008 Fairchild Semiconductor International
Typ
Max
Units
--
2.27
°CW
--
50
°CW
--
110
°CW
Rev. A1, October 2008
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