FQD6N50CTM Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 500 V, 4.5 A, 1.2

FQD6N50C
N-Channel QFET^® MOSFET
500 V, 4.5 A, 1.2 Ω
November 2013
Features
• 4.5 A, 500 V, R_DS(on) = 1.2 Ω (Max.) @V_GS = 10 V, I_D = 2.25 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ.15 pF)
• 100% avalanche tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
D
G
S
D-PAK
G
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_A = 25°C)*
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQD6N50CTM
500
4.5
2.7
18
± 30
300
4.5
6.1
4.5
2.5
61
0.49
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction-to-Ambient (* 1 in² pad of 2 oz copper), Max.
FQD6N50CTM
2.05
110
50
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Unit
°C/W
©2004 Fairchild Semiconductor Corporation
1
FQD6N50C Rev. C1
www.fairchildsemi.com