FQD6N25TM Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 250 V, 4.4 A, 1.0

FQD6N25
N-Channel QFET^® MOSFET
250 V, 4.4 A, 1.0 Ω
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 4.4 A, 250 V, R_DS(on) = 1.0 Ω (Max.) @ V_GS = 10 V,
I_D = 2.2 A
• Low Gate Charge (Typ. 6.6 nC)
• Low Crss (Typ. 7.5 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
G
S
D-PAK
G
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.

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Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
 

 

 

 

 

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Thermal Characteristics
Symbol
Parameter
R_JC
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in² Pad of 2-oz Copper), Max.
FQD6N25TM
2.78
110
50
Unit
o_C/W
©2011 Fairchild Semiconductor Corporation
1
FQD6N25 Rev. C1
www.fairchildsemi.com