FQD5N15TM Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 150 V, 4.3 A, 800 mΩ

FQD5N15
N-Channel QFET^® MOSFET
150 V, 4.3 A, 800 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
• 4.3 A, 150 V, R_DS(on) = 800 mΩ (Max.) @ V_GS = 10 V,
I_D = 2.15 A
• Low Gate Charge (Typ. 5.4 nC)
• Low Crss (Typ. 7.5 pF)
• 100% Avalanche Tested
D
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Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.

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Thermal Characteristics
Symbol
Parameter
R_JC
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in² Pad of 2-oz Copper), Max.
FQD5N15TM
4.17
110
50
Unit
o_C/W
©2000 Fairchild Semiconductor Corporation
1
FQD5N15 Rev. C0
www.fairchildsemi.com