FQD4N25TM Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET

FQD4N25 / FQU4N25
N-Channel QFET MOSFET
250 V, 3 A, 1.75Ω
March 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
• 3 A, 250 V, R_DS(on) = 1.75 Ω (Max) @V_GS = 10 V,
I_D = 1.5 A
• Low Gate Charge (Typ. 4.3 nC)
• Low Crss (Typ. 4.8 pF)
• 100% Avalanche Tested





 





   








 



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©2005 Fairchild Semiconductor Corporation
FQD4N25 / FQU4N25 Rev. C0

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