FQD4N20TF Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 200 V, 3.0 A, 1.4

FQD4N20
N-Channel QFET^® MOSFET
200 V, 3.0 A, 1.4 Ω
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 3.0 A, 200 V, R_DS(on) = 1.4 Ω (Max.) @ V_GS = 10 V,
I_D = 1.5 A
• Low Gate Charge (Typ. 5.0 nC)
• Low Crss (Typ. 5.0 pF)
• 100% Avalanche Tested
D
D
G
S
D-PAK
G
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.

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Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
 

 

 

 

 

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Thermal Characteristics
Symbol
Parameter
R_JC
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in² Pad of 2-oz Copper), Max.
FQD4N20TM
4.17
110
50
Unit
o_C/W
©2009 Fairchild Semiconductor Corporation
1
FQD4N20 Rev. C1
www.fairchildsemi.com