FQD1N80TF Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 800 V, 1.0 A, 20

April 2013
FQD1N80 / FQU1N80
N-Channel QFET^® MOSFET
800 V, 1.0 A, 20 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 1.0 A, 800 V, R_DS(on) = 20 Ω (Max.) @ V_GS = 10 V,
I_D = 0.5 A
• Low Gate Charge (Typ. 5.5 nC)
• Low Crss (Typ. 2.7 pF)
• 100% Avalanche Tested
D
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D-PAK
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D
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I-PAK
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Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD1N80 / FQU1N80
800
1.0
0.63
4.0
± 30
90
1.0
4.5
4.0
2.5
45
0.36
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance, Junction-to-Case, Max.
R_θJA
Thermal Resistance, Junction-to-Ambient *
R_θJA
Thermal Resistance, Junction-to-Ambient, Max.
* When mounted on the minimum pad size recommended (PCB Mount)
FQD1N80 / FQU1N80
2.78
50
110
Unit
°C/W
°C/W
°C/W
©2009 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80 Rev. C0
www.fairchildsemi.com