FQD17P06_13 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – P-Channel QFET MOSFET

June 2013
FQD17P06 / FQU17P06
P-Channel QFET^® MOSFET
- 60 V, - 12 A, 135 mΩ
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor^®’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC motor
control, and variable switching power applications.
Features
• -12 A, -60 V, R_DS(on) = 135 mΩ (Max.) @ V_GS = -10 V
• Low Gate Charge (Typ. 21 nC)
• Low Crss (Typ. 80 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
G
S
D
D-PAK
(TO252)
GDS
I-PAK
(TO251)
G{
S
{
●
●
▶▲
●
{
D
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
R_θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient *, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
* When mounted on the minimum pad size recommended (PCB Mount)
FQD17P06 / FQU17P06
-60
-12
-7.6
-48
± 25
300
-12
4.4
-7.0
2.5
44
0.35
-55 to +150
300
FQD17P06 / FQU17P06
2.85
50
110
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Unit
°C/W
©2001 Fairchild Semiconductor Corporation
1
FQD17P06/ FQU17P06 Rev.C0
www.fairchildsemi.com