FQD17N08LTM Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 80 V, 12.9 A, 100 mΩ

FQD17N08L
N-Channel QFET^® MOSFET
80 V, 12.9 A, 100 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
Features
• 12.9 A, 80 V, R_DS(on) = 100 mΩ (Max.) @ V_GS = 10 V,
I_D = 6.45 A
• Low Gate Charge (Typ. 8.8 nC)
• Low Crss (Typ. 29 pF)
• 100% Avalanche Tested
D
D
G
S
D-PAK
G
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.
Symbol
Parameter
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
FQD17N08LTM
80
12.9
8.2
51.6
± 20
100
12.9
4.0
6.5
2.5
40
0.32
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_JC
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in² Pad of 2-oz Copper), Max.
FQD17N08LTM
3.13
110
50
Unit
o_C/W
©2000 Fairchild Semiconductor Corporation
1
FQD17N08L Rev. C1
www.fairchildsemi.com