FQD10N20L_13 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET

April 2013
FQD10N20L / FQU10N20L
N-Channel QFET^® MOSFET
200 V, 7.6 A, 360 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 7.6 A, 200 V, R_DS(on) = 360 mΩ (Max.) @ V_GS = 10 V,
I_D = 3.8 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 14 pF)
• 100% Avalanche Tested
• Low level gate drive requirement allowing direct
operation from logic drivers
D
D
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G
S
D-PAK
G
D
S
I-PAK
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Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
FQD10N20L / FQU10N20L
200
7.6
4.8
30.4
± 20
180
7.6
5.1
5.5
2.5
51
0.4
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R_θJC
R_θJA
R_θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient, Max.
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor Corporation
FQD10N20L / FQU10N20L Rev. C0
FQD10N20L / FQU10N20L
2.48
50
110
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com