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FQD10N20C_09 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET | |||
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FQD10N20C / FQU10N20C
200V N-Channel MOSFET
January 2009
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchildâs proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Features
⢠7.8A, 200V, RDS(on) = 0.36⦠@VGS = 10 V
⢠Low gate charge ( typical 20 nC)
⢠Low Crss ( typical 40.5 pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
⢠RoHS Compliant
D
D-PAK
G S FQD Series
GDS
I-PAK
FQU Series
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD10N20C / FQU10N20C
200
7.8
5.0
31.2
± 30
210
7.8
5.0
5.5
50
0.4
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ
Max
Units
--
2.5
°C/W
--
50
°C/W
--
110
°C/W
©2009 Fairchild Semiconductor Corporation
Rev. A2, January 2009
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