FQB9N50CTM Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 500 V, 9 A, 800 mΩ

FQB9N50C
N-Channel QFET^® MOSFET
500 V, 9 A, 800 mΩ
November 2013
Features
• 9 A, 500 V, R_DS(on) = 800 mΩ (Max.) @ V_GS = 10 V, I_D = 4.5 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 24 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
D
G
S
D²-PAK
G
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_C = 25°C)
- Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
S
FQB9N50CTM
500
9
5.4
36
± 30
360
9
13.5
4.5
135
1.07
-55 to +150
300
FQB9N50CTM
0.93
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
©2003 Fairchild Semiconductor Corporation
1
FQB9N50C Rev. C1
www.fairchildsemi.com