FQB95N03L Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel Logic Level PWM Optimized Power MOSFET

December 2002
FQB95N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
• r_DS(ON) = 0.0064Ω (Typ), V_GS = 10V
• r_DS(ON) = 0.010Ω (Typ), V_GS = 5V
• Q_g (Typ) = 24nC, V_GS = 5V
• Q_gd (Typ) = 8nC
• C_ISS (Typ) = 2600pF
DRAIN
(FLANGE)
D
GATE
G
SOURCE
TO-263AB
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 100^oC, V_GS = 4.5V)
Continuous (T_C = 25^oC, V_GS = 10V, R_θJA = 43^oC/W)
Pulsed
P_D
T_J, T_STG
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in² copper pad area
Package Marking and Ordering Information
Device Marking
FQB95N03L
Device
FQB95N03L
Package
TO-263AB
Reel Size
330mm
S
Ratings
30
±16
75
48
15
Figure 4
80
0.65
-55 to 150
1.5
62
43
Tape Width
24mm
Units
V
V
A
A
A
A
W
W/^oC
o_C
o_C/W
o_C/W
o_C/W
Quantity
800 units
©2002 Fairchild Semiconductor Corporation
FQB95N03L Rev. B1