FQB8P10TM Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel QFET® MOSFET -100 V, -8.0 A, 185 mΩ

FQB8P10
P-Channel QFET^® MOSFET
-100 V, -8.0 A, 185 mΩ
November 2013
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
Features
• -8.0 A, -100 V, R_DS(on) = 185 mΩ (Max.) @ V_GS = -10 V,
I_D = -4.0 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
S
D
G
G
S
D²-PAK
D
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.
Symbol
Parameter
V_DSS
Drain-Source Voltage
I_D
Drain Current - Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
I_DM
Drain Current - Pulsed
(Note 1)
V_GSS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy
(Note 2)
I_AR
Avalanche Current
(Note 1)
E_AR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
P_D
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering,
1/8" from case for 5 seconds.
FQB8P10TM
-100
-8.0
-5.7
-32
± 30
150
-8.0
6.5
-6.0
3.75
65
0.43
-55 to +175
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_JC
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in² Pad of 2-oz Copper), Max.
FQB8P10TM
2.31
62.5
40
Unit
o_C/W
©2000 Fairchild Semiconductor Corporation
1
FQB8P10 Rev. C1
www.fairchildsemi.com