FQB8N60CTM Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω

FQB8N60C / FQI8N60C
N-Channel QFET^® MOSFET
600 V, 7.5 A, 1.2 Ω
December 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• ^{7.5 A, 600 V, R}DS(on) ^{= 1.2 Ω (Max.) @ V}GS ^{= 10 V,}
I_D = 3.75 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
G
S
D²-PAK
GDS
I²-PAK
G
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_A = 25°C)*
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQB8N60CTM / FQI8N60CTU
600
7.5
4.6
30
± 30
230
7.5
14.7
4.5
3.13
147
1.18
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_JC
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in² Pad of 2-oz Copper), Max.
FQB8N60CTM /
FQI8N60CTU
0.85
62.5
40
Unit
o_C/W
©2003 Fairchild Semiconductor Corporation
1
FQB8N60C / FQI8N60C Rev. C1
www.fairchildsemi.com