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FQB7N60 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET | |||
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FQB7N60 / FQI7N60
600V N-Channel MOSFET
April 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchildâs proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
⢠7.4A, 600V, RDS(on) = 1.0⦠@VGS = 10 V
⢠Low gate charge ( typical 29 nC)
⢠Low Crss ( typical 16 pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
D
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S
FQB7N60 / FQI7N60
600
7.4
4.7
29.6
±30
580
7.4
14.2
4.5
3.13
142
1.14
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Typ
Max
Units
--
0.88
°CW
--
40
°CW
--
62.5
°CW
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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