FQB6N60C Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

FQB6N60C / FQI6N60C
600V N-Channel MOSFET
QFET^®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 5.5A, 600V, R_DS(on) = 2.0Ω @V_GS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 7 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D²-PAK
FQB Series
GDS
I²-PAK
FQI Series
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
Drain-Source Voltage
I_D
Drain Current - Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
I_DM
Drain Current - Pulsed
(Note 1)
V_GSS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy
(Note 2)
I_AR
Avalanche Current
(Note 1)
E_AR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient*
R_θJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
D
!
G!
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S
FQB6N60C / FQI6N60C
600
5.5
5.5 *
3.3
3.3 *
22
22 *
± 30
300
5.5
12.5
4.5
125
1.0
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Typ
Max
Units
-
1.0
°C/W
-
40
°C/W
-
62.5
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004